| PART |
Description |
Maker |
| UC3842A UC3843A |
(UC3842A /UC3843A) CURRENT MODE PWM CONTROL CIRCUITS
|
UNISONIC TECHNOLOGIES
|
| UC3842A UC3843AN UC3842AD UC3842AN UC3842A_UC3843A |
From old datasheet system
(UC3842A / UC3843A) SMPS Controller
SMPS Controller 开关电源控制器
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| UC3842AD1 UC3842AN UC3844AD1 UC3844AN UC3843A UC38 |
(UC3842A - UC3845A) HIGH PERFORMANCE CURRENT MODE PWM CONTROLLER
(UC2842A - UC2845A) HIGH PERFORMANCE CURRENT MODE PWM CONTROLLER
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
http://
|
| JAN1N5300U JANS1N5314UR-1 1N5283UR-1 1N5284UR-1 1N |
Current Limiter Diode
Single Inverter Gate 5-SOT-23 -40 to 85 1.5 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.43 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
4-Pin DIP Phototransistor Output Optocoupler 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 3.6 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.27 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 4.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.33 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.91 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.39 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
Pulse-Width-Modulation (Pwm) Control Circuit 16-SOIC 0 to 70
CURRENT REGULATOR DIODES
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Z86L7908PSC |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:50mA 8位微控制
|
INTEGRAL JOINT STOCK COMPANY
|
| TA20141803DH |
SCR Thyristor; Gate Trigger Current Max, Igt:200mA; Current, It av:1800A; Package/Case:TA2; Repetitive Reverse Voltage Max, Vrrm:1400V; Current Rating:2820A RoHS Compliant: Yes
|
POWEREX INC
|
| ACS781 ACS781KLRTR-150B-T ACS781LLRTR-100B-T ACS78 |
High-Precision Linear Hall-Effect-Based Current Sensor IC With 200 μΩ Current Conductor
Core-less, micro-sized, 100 A continuous current package
|
Allegro MicroSystems
|
| CR220 CR330 CR390 CR270 CR300 |
Current Regulator Diodes(最大整流电.20mA的电流稳压二极管)
Current Regulator Diodes(最大整流电B>3.30mA的电流稳压二极管)
Current Regulator Diodes(最大整流电B>3.90mA的电流稳压二极管)
Current Regulator Diodes(最大整流电B>2.70mA的电流稳压二极管)
Current Regulator Diodes(??ぇ?存??垫悼.00mA???娴?ǔ??????)
|
Vishay Intertechnology,Inc.
|
| MG360V1US41 E002277 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
Toshiba Semiconductor
|
| Q62705-K151 KPY33-R |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 相对硅压阻压力传感器
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
Silicon Piezoresistive Relative Press...
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| 74AHCT259D 74AHC259D 74AHC259PW 74AHCT259PW HCT259 |
Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole 8位可寻址锁存
8-bit addressable latch
|
NXP Semiconductors N.V.
|
